Grazing incidence X-ray reflectometry studies of CdTe(111) surfaces and a-Si thin films
Identifieur interne : 000C88 ( Main/Exploration ); précédent : 000C87; suivant : 000C89Grazing incidence X-ray reflectometry studies of CdTe(111) surfaces and a-Si thin films
Auteurs : Y. Ijdiyaou [Maroc] ; K. Hafidi [Maroc] ; M. Azizan [Maroc] ; E. L Ameziane [Maroc] ; A. Outzourhit [Maroc] ; L. Dreesen [Belgique] ; K. Benai [Maroc]Source :
- Solar Energy Materials and Solar Cells [ 0927-0248 ] ; 1998.
Abstract
Chemically treated cadmium telluride (CdTe) surfaces and amorphous silicon (a-Si) thin films were characterized by X-ray reflectometry at grazing incidence. In the case of the surface of CdTe single crystal treated with an oxidizing agent (a solution of Br2 in CH3OH), the superficial layer was found to be less dense than its support with a profound alteration of CdTe in the volume. After rinsing in KOH solution, the properties of single-crystalline CdTe are obtained. In the case of a-Si thin layers, we show that the simulation of the reflectometry curves enables not only the determination of the layer thickness but also the detection of an ultrathin superficial oxide layer.
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DOI: 10.1016/S0927-0248(97)00264-X
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